Fabrication of gallium nitride nanowires by nitrogen plasma

Large-area and uniform DBD-type nitrogen plasma

Diamond and Related Materials 17 (2008), 1780

Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires

Nanotechnology 20 (2009), 055606

Rolling Transfer Imprinting

Roll-transfer printing method can be used to transfer Zinc Oxide (ZnO) nanowires to a polydimethylsiloxane (PDMS) stamp and then print the ZnO nanowires on the received substrate for to fabricate NW-FETs.

Nanotechnology 20 (2009), 195302

Dielectrophoresis and Hot-Pressing

Zinc Oxide nanowire field-effect transistors (NW-FETs) can be fabricated by using the dielectrophoresis (DEP) and hot-pressing methods.

Accepted by Nanotechnology

Fabrication of Roller with Seamless microlens array

Self-organization of microsphere

Nanoimprinting Lithography and its application for polarizer

Flexible flat panel displays

In this part, our team successfully developed a novel method to fabricate NWs transistors. By rolling transfer method, NWs vertically grown on Ag- substrate can be transferred to target substrate with orderly oriented direction and uniform distribution. The picture given above is a cross-sectional view of the substrate after lithography process, we can see that NWs with order orientation cross the space between the patterns of photoresist. Following by metal electrode deposition, spin-coating dielectric layer and gate electrode deposition, the NWs transistors can be fabricated.